{"created":"2023-05-15T12:35:11.953800+00:00","id":4026,"links":{},"metadata":{"_buckets":{"deposit":"23ba4493-9564-4d51-bc0f-507fe139b243"},"_deposit":{"created_by":3,"id":"4026","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4026"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004026","sets":["31"]},"author_link":["11725","11723","8776","4522","11720","11721"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-02-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"541","bibliographicPageStart":"539","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Variations of the GaAs surface conditions and the adsorption of the precursor elements of Cd and Te on the (100)GaAs substrate were studied by x‐ray photoelectron spectroscopy at the initial stage of CdTe growth by organometallic vapor phase epitaxy. The stoichiometry of GaAs substrates was found to recover by annealing in the H2 environment (500°C, 5 min), while the surface was initially in an As‐rich condition after etching with H2SO4:H2O2:H2O (5:1:1). The preferential adsorption of Te on the GaAs surface was also observed. 〈100〉 oriented growth was obtained routinely when the GaAs surface was fully stabilized with Te after the H2 anneal under the above conditions. 〈111〉 oriented growth resulted when dimethylcadmium was first introduced after the anneal.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"安田, 和人"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.102738"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.102738","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sone, Syuji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ekawa, Mitsuru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yasuda, Kazuhito","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Sugiura, Yoshiyuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Saji, Manabu","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tanaka, Akikazu","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 56_539.pdf","filesize":[{"value":"326.3 kB"}],"format":"application/pdf","license_note":"Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 56(6),pp.539-541 ; 1990 and may be found at http://link.aip.org/link/?apl/56/539","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4026/files/APL 56_539.pdf"},"version_id":"f7926c4f-19ac-4abb-a849-da0be4317846"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"X-ray photoelectron spectroscopy  studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"X-ray photoelectron spectroscopy  studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4026","relation_version_is_last":true,"title":["X-ray photoelectron spectroscopy  studies of initial growth mechanism of CdTe layers grown on (100)GaAs by organometallic vapor phase epitaxy"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:53:48.564208+00:00"}