{"created":"2023-05-15T12:35:12.520229+00:00","id":4035,"links":{},"metadata":{"_buckets":{"deposit":"b75efa8a-71da-4c5f-808b-6c65a8747259"},"_deposit":{"created_by":91,"id":"4035","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4035"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004035","sets":["31"]},"author_link":["3257","4028","4015","3257","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-04-09","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageEnd":"1435","bibliographicPageStart":"1433","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"GaAs was grown on a Si substrate by metalorganic chemical vapor deposition using GaAs/GaAsP strained‐layer superlattice (SLS) intermediate layers. The dislocation density decreases at the interface between GaAs and the SLS, but does not decrease in the SLS. When a GaAs/GaAsP SLS is used as the intermediate layer, part of the threading dislocation propagates into the top GaAs layer because of the lattice mismatch of GaAs and SLS. The low etch pit density of (3-5)×105 cm-2 was obtained by using the intermediate layer of a GaAs/GaAsP SLS and an AlAs/GaAs superlattice with thermal cycle annealing.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.102489"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.102489","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 56_1433.pdf","filesize":[{"value":"366.6 kB"}],"format":"application/pdf","license_note":"Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 56(15), pp.1433-1435; 1990 and may be found at http://link.aip.org/link/?apl/56/1433","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4035/files/APL 56_1433.pdf"},"version_id":"1cb419cb-f81f-490a-974c-5ef2862421cf"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4035","relation_version_is_last":true,"title":["Low etch pit density GaAs on Si grown by metalorganic chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T01:28:27.720009+00:00"}