{"created":"2023-05-15T12:35:12.774566+00:00","id":4039,"links":{},"metadata":{"_buckets":{"deposit":"016aefab-d971-4995-a020-a54095fe3dbe"},"_deposit":{"created_by":91,"id":"4039","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4039"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004039","sets":["31"]},"author_link":["522","3257","4028","4015","522","11769","11770","3257","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"6913","bibliographicPageStart":"6908","bibliographicVolumeNumber":"67","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The crystallinity of GaAs grown on Si with various intermediate layers by metalorganic chemical vapor deposition and characteristics of Schottky diodes fabricated on the grown GaAs/Si have been studied. The GaAs/Si with an Al0.55Ga0.45P intermediate layer has both good crystallinity, x‐ray full width at half maximum of 188 arcsec, and a smooth surface. The Schottky diode fabricated on the GaAs/Si with an Al0.55Ga0.45P intermediate layer also shows good forward and reverse current‐voltage characteristics with an ideality factor of 1.06, as good as for an n‐type GaAs substrate. However, a relatively large leakage current is observed under reverse and small forward bias. This leakage current is caused by generation and recombination through the centers related to dislocations in the GaAs/Si.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Egawa, Takashi","nameLang":"en"},{"name":"江川, 孝志","nameLang":"ja"},{"name":"エガワ, タカシ","nameLang":"ja-Kana"}]},{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.345083"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.345083","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"},{"creatorName":"江川, 孝志","creatorNameLang":"ja"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nozaki, S.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11769","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Noto, N.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11770","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 67_6908.pdf","filesize":[{"value":"684.8 kB"}],"format":"application/pdf","license_note":"Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 67(11), pp.6908- 6913 ; 1990 and may be found at http://link.aip.org/link/?jap/67/6908","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4039/files/JAP 67_6908.pdf"},"version_id":"68ef3333-dc35-40a0-b920-464c68acc8ba"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganlc chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganlc chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4039","relation_version_is_last":true,"title":["Crystallinity and Schottky diode characteristics of GaAs grown on Si by metalorganlc chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T01:28:40.315225+00:00"}