Low-threshold continuous-wave room-temperature operation of Al xGa1-xAs/GaAs single quantum well lasers grown by metalorganic chemical vapor deposition on Si substrates with SiO2 back coating

APL 57_1179

WEKO3

lat lon distance

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APL 57_1179.pdf

https://nitech.repo.nii.ac.jp/record/4053/files/APL 57_1179.pdf

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APL 57_1179.pdf (262.3 kB) sha256 161cd518f8c1f8174f2b269e1cb387c9c1befaac6f913ca4f77b25ae3aa826dc	Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 57(12), pp.1179-1181; 1990 and may be found at http://link.aip.org/link/?apl/57/1179

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