@article{oai:nitech.repo.nii.ac.jp:00004061,
 author = {Ichimura, Masaya and Higuchi, K. and Hattori, Y. and Wada, T. and Kitamura, N.},
 issue = {12},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Dec},
 note = {Defect concentrations in AlxGa1-xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2-Sb) or an Al antisite (Al2-Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2-Sb is dominant in GaSb equilibrated with a Sb‐rich solution, but the concentration of Sb antisites comes close to that of Ga2-Sb as temperature is lowered. For x larger than 0.6, a group‐III vacancy is the predominant defect in the case of Sb‐rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible., application/pdf},
 pages = {6153--6158},
 title = {Native defects in the AlxGa1-xSb alloy semiconductor},
 volume = {68},
 year = {1990}
}