{"created":"2023-05-15T12:35:14.176992+00:00","id":4061,"links":{},"metadata":{"_buckets":{"deposit":"07797e16-4f62-4057-9eee-7c70bb653542"},"_deposit":{"created_by":3,"id":"4061","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4061"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004061","sets":["31"]},"author_link":["11878","11879","3523","11877","11876"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1990-12-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"6158","bibliographicPageStart":"6153","bibliographicVolumeNumber":"68","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Defect concentrations in AlxGa1-xSb which is in equilibrium with a liquid phase are calculated. When the liquid phase is Ga rich, a Ga antisite (Ga2-Sb) or an Al antisite (Al2-Sb) is dominant, and the concentrations of vacancies are much smaller than the antisite concentrations. Ga2-Sb is dominant in GaSb equilibrated with a Sb‐rich solution, but the concentration of Sb antisites comes close to that of Ga2-Sb as temperature is lowered. For x larger than 0.6, a group‐III vacancy is the predominant defect in the case of Sb‐rich solutions. Calculated net acceptor concentrations agree well with those determined experimentally. A complex defect composed of GaSb and a Ga vacancy, which have been taken as the dominant residual acceptor, is expected to be negligible.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.346904"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.346904","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Higuchi, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hattori, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wada, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kitamura, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 68_6153.pdf","filesize":[{"value":"431.8 kB"}],"format":"application/pdf","license_note":"Copyright (1990) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 68(12), pp.6153- 6158 ; 1990and may be found at http://link.aip.org/link/?jap/68/6153","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4061/files/JAP 68_6153.pdf"},"version_id":"0156a5e9-17e5-4d3d-9712-cbd232d359f4"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Native defects in the AlxGa1-xSb alloy semiconductor","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Native defects in the AlxGa1-xSb alloy semiconductor","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4061","relation_version_is_last":true,"title":["Native defects in the AlxGa1-xSb alloy semiconductor"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:25:41.642192+00:00"}