@article{oai:nitech.repo.nii.ac.jp:00004078,
 author = {Kawabata, T. and Okuyama, F. and Tanemura, Masaki},
 issue = {6},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Mar},
 note = {Polycrystalline Al, Mo, Ti, and Ta films deposited on Si wafers were systematically depth profiled by Auger electron spectroscopy using Ar+ and N+2 ions as projectile. In agreement with the traditional concept of reactive sputtering, N+2 sputtering of Al and Mo films textured the surface less, thereby improving depth resolution significantly. N+2‐sputtered Ti and Ta films, on the other hand, were characterized by microprojections thickly covering the bombarded area, forming a striking contrast to Ar+‐sputtered Ti and Ta displaying less‐enhanced surface texturing. As revealed by electron spectroscopy for chemical analysis, the N+2‐bombarded surface was nitrided for every material, and the nitride zone was confined to the surface or near‐surface for Al and Mo and extended far below the surface for Ti and Ta. It is thus considered that three‐dimensional nitridation lay under the enhanced surface texturing observed for N+2‐sputtered Ti and Ta., application/pdf},
 pages = {3723--3728},
 title = {Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis},
 volume = {69},
 year = {1991}
}