{"created":"2023-05-15T12:35:15.096905+00:00","id":4078,"links":{},"metadata":{"_buckets":{"deposit":"5da9c688-0e1d-4512-b2cd-99803f425e68"},"_deposit":{"created_by":3,"id":"4078","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4078"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004078","sets":["31"]},"author_link":["11960","8610","11959"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1991-03-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"3728","bibliographicPageStart":"3723","bibliographicVolumeNumber":"69","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Polycrystalline Al, Mo, Ti, and Ta films deposited on Si wafers were systematically depth profiled by Auger electron spectroscopy using Ar+ and N+2 ions as projectile. In agreement with the traditional concept of reactive sputtering, N+2 sputtering of Al and Mo films textured the surface less, thereby improving depth resolution significantly. N+2‐sputtered Ti and Ta films, on the other hand, were characterized by microprojections thickly covering the bombarded area, forming a striking contrast to Ar+‐sputtered Ti and Ta displaying less‐enhanced surface texturing. As revealed by electron spectroscopy for chemical analysis, the N+2‐bombarded surface was nitrided for every material, and the nitride zone was confined to the surface or near‐surface for Al and Mo and extended far below the surface for Ti and Ta. It is thus considered that three‐dimensional nitridation lay under the enhanced surface texturing observed for N+2‐sputtered Ti and Ta.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"種村, 眞幸"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.348465"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.348465","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Kawabata, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Okuyama, F.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Tanemura, Masaki","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 69_3723.pdf","filesize":[{"value":"742.8 kB"}],"format":"application/pdf","license_note":"Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 69(6), pp.3723- 3728 ; 1991 and may be found at http://link.aip.org/link/?jap/69/3723","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4078/files/JAP 69_3723.pdf"},"version_id":"6a27fbda-98e2-4ef9-b1d4-ffd46b35c039"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4078","relation_version_is_last":true,"title":["Fundamental and practical aspects of reactive N+2-ion sputtering in Auger in-depth analysis"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:25:34.357286+00:00"}