{"created":"2023-05-15T12:35:15.224275+00:00","id":4081,"links":{},"metadata":{"_buckets":{"deposit":"50ada49e-b5a5-41dc-bae6-9516065bcf1c"},"_deposit":{"created_by":91,"id":"4081","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4081"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004081","sets":["31"]},"author_link":["522","3257","4028","4015","522","11769","3257","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1991-03-25","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"1267","bibliographicPageStart":"1265","bibliographicVolumeNumber":"58","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"GaAs metal‐semiconductor field‐effect transistors (MESFETs) on Si substrates back‐coated with SiO2 grown at high temperature by metalorganic chemical vapor deposition have shown good pinch‐off and suppressed sidegating. The SiO2 back‐coating suppresses Si incorporation into an undoped GaAs layer during growth, and use of such an undoped layer with a low electron concentration beneath the channel layer improves a pinch‐off characteristic. Higher growth temperature also improves crystallinity of GaAs layers grown on Si and helps to suppress the sidegating effect of GaAs MESFETs. The maximum transconductance of 160 mS/mm and the K value of 46.8 mA/V2mm have been obtained for a MESFET with 2.5 μm gate length.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Egawa","familyNameLang":"en"},{"familyName":"江川","familyNameLang":"ja"},{"familyName":"エガワ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Takashi","givenNameLang":"en"},{"givenName":"孝志","givenNameLang":"ja"},{"givenName":"タカシ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Egawa, Takashi","nameLang":"en"},{"name":"江川, 孝志","nameLang":"ja"},{"name":"エガワ, 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This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 58(12), pp.1265-1267; 1991 and may be found at http://link.aip.org/link/?apl/58/1265","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4081/files/APL 58_1265.pdf"},"version_id":"369e1c85-e64c-4016-8510-7a9296745af9"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4081","relation_version_is_last":true,"title":["Improved characteristics of GaAs metal-semiconductor field-effect transistors on Si substrates back-coated with SiO2 by metalorganic chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T02:19:44.803827+00:00"}