{"created":"2023-05-15T12:35:15.267010+00:00","id":4082,"links":{},"metadata":{"_buckets":{"deposit":"1b478dbd-cfa5-418b-9f64-8cf7aea9578a"},"_deposit":{"created_by":91,"id":"4082","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4082"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004082","sets":["31"]},"author_link":["3523","3523","11985"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1991-04-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"4142","bibliographicPageStart":"4140","bibliographicVolumeNumber":"69","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Point defect concentrations in InGaAsP grown from liquid phases were calculated. Vacancies and antisites were taken to be dominant defects. The calculated antisite concentrations decrease with increasing band gap, while the vacancy concentrations are weakly dependent on composition. Although development of dislocations is known to be easier in InGaAsP lattice matched to GaAs than in those lattice matched to InP, the difference in the vacancy concentration between them is small when their growth temperatures are assumed to be the same. However, a high growth temperature usually adopted for InGaAsP on GaAs will result in larger vacancy concentrations.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.348431"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.348431","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Wada, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11985","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 69_4140.pdf","filesize":[{"value":"312.8 kB"}],"format":"application/pdf","license_note":"Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 69(7), pp.4140- 4142 ; 1991and may be found at http://link.aip.org/link/?jap/69/4140","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4082/files/JAP 69_4140.pdf"},"version_id":"7e0ce024-b1cc-4b9e-a0bf-e48481440d34"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Point defect concentrations in InGaAsP quaternary alloys","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Point defect concentrations in InGaAsP quaternary alloys","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4082","relation_version_is_last":true,"title":["Point defect concentrations in InGaAsP quaternary alloys"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T02:19:44.489490+00:00"}