Transmission electron microscopy characterization of the initial stage of epitaxial growth of GaP on Si by low-pressure metalorganic chemical vapor deposition

APL 58_2108

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APL 58_2108.pdf

https://nitech.repo.nii.ac.jp/record/4086/files/APL 58_2108.pdf

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APL 58_2108.pdf (362.0 kB) sha256 159b001202067594078e93c7976df9f9297c65453359907b1ef7b51e0c7f9caf	Copyright (1991) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 58(19), pp.2108-2110; 1991 and may be found at http://link.aip.org/link/?apl/58/2108

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