@article{oai:nitech.repo.nii.ac.jp:00004136,
 author = {Ekawa, Mitsuru and Yasuda, Kazuhito and Ferid, Touati and Saji, Manabu and Tanaka, Akikazu},
 issue = {6},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Mar},
 note = {The As doping mechanism in (100) CdTe layers grown on (100)GaAs by atmospheric‐pressure metalorganic vapor phase epitaxy was studied. Triethylarsine (TEAs) was used as a dopant source. The source materials used were dimethylcadmium (DMCd) and diethyltelluride (DETe). The As incorporation was enhanced by decreasing the DETe flow rate under a fixed DMCd flow condition, and by lowering the growth temperature. Assuming 100% activation of As, the As incorporation efficiency was estimated to be about 0.1%. The As incorporation was dominated by the sticking rate of the As species onto the Cd species. The hole concentration was controlled from 2×1015 to 3×1016 cm-3 in proportion to the TEAs flow rate below 1×10-7 mol/min. Those doped layers showed hole mobilities as high as 75 cm2/Vs. Low‐temperature photoluminescence (PL) studies revealed that a neutral‐acceptor bound‐exciton at 1.5901 eV is due to a substitutional As acceptor on the Te site. The As ionization energy was about 90 meV from the PL and electrical measurements., application/pdf},
 pages = {2669--2674},
 title = {Mechanism of arsenic incorporation and electrical properties in CdTe layers grown by metalorganic vapor phase epitaxy},
 volume = {71},
 year = {1992}
}