{"created":"2023-05-15T12:35:19.139559+00:00","id":4171,"links":{},"metadata":{"_buckets":{"deposit":"3aa808c4-a81d-4f81-8ad9-7933de28e06e"},"_deposit":{"created_by":91,"id":"4171","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4171"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004171","sets":["31"]},"author_link":["3523","12388","3523","12390","11985","12392"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1992-09-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"2533","bibliographicPageStart":"2531","bibliographicVolumeNumber":"72","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Micro-Raman spectroscopy is applied to evaluate change of the crystal quality in molecular beam epitaxial GaAs layers on Si after rapid thermal annealing (RTA). The forbidden transverse optical phonon is observed in the GaAs layers especially near the interface. In the as-grown state, the Raman frequency of the longitudinal optical phonon shifts toward higher frequency near the interface. This blue shift indicates the existence of the compressive stress due to the lattice mismatch between GaAs and Si. On the other hand, after the RTA, the Kaman peak shifts toward lower frequency. This red shift indicates that the tensile stress exists near the interface because of the difference in thermal expansion. The stress change indicates the relaxation of the lattice mismatch stress near the interface by formation of dislocations during the RTA.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.351551"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.351551","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ito, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12388","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Usami, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12390","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wada, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11985","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kano, Hiroyuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12392","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 72_2531.pdf","filesize":[{"value":"341.6 kB"}],"format":"application/pdf","license_note":"Copyright (1992) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 72(6), pp.2531- 2533 ; 1992and may be found at http://link.aip.org/link/?jap/72/2531","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4171/files/JAP 72_2531.pdf"},"version_id":"fbebd3c1-f690-41b1-b872-4d76eceda9cd"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4171","relation_version_is_last":true,"title":["Micro-Raman study on GaAs layers directly grown on (100) Si by molecular beam epitaxy"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T04:59:40.273460+00:00"}