{"created":"2023-05-15T12:35:19.264645+00:00","id":4174,"links":{},"metadata":{"_buckets":{"deposit":"a7c806f6-074f-4ffa-9528-bef33a5ac041"},"_deposit":{"created_by":91,"id":"4174","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4174"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004174","sets":["31"]},"author_link":["3523","3523","12402","12403","11985"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1992-09-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"1062","bibliographicPageStart":"1056","bibliographicVolumeNumber":"E75-C","bibliographic_titles":[{"bibliographic_title":"IEICE transactions on communications","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A Ge/Si structure grown by chemical vapor deposition (CVD) is angle-lapped and characterized by the micro-Raman spectroscopy. Near the interface, the phonon mode due to the Si-Ge bond is clearly observed, which indicates that a SiGe alloy is formed by the solid-phase interdiffusion at the interface. The thickness of the interfacial alloy layer is about 0.2 ?m. Amount of residual strain is estimated by comparing the measured phonon frequencies with those predicted from the composition profie, but the shift due to the residual strain is not appreciable. Both the interdiffusion at the interface and the nearly complete relaxation of the lattice mismatch are attributed to the high growth temperature of the CVD sample.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electronics, Information and Communication Engineers","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0916-8516","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA10826261","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Moriguchi, Yukihisa","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12402","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Usami, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12403","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Wada, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11985","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"E75-C_1056.pdf","filesize":[{"value":"547.6 kB"}],"format":"application/pdf","license_note":"Copyright (c) 1992 IEICE　http://search.ieice.org/index.html","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4174/files/E75-C_1056.pdf"},"version_id":"10f3ee93-ba68-44f8-a2a0-e0cabb20f615"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4174","relation_version_is_last":true,"title":["Micro-Raman Characterization of a Ge/Si Heterostructure Grown by Chemical Vapor Deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T04:59:46.272071+00:00"}