@article{oai:nitech.repo.nii.ac.jp:00004208,
 author = {Ichimura, Masaya and Usami, A. and Wada, T. and Fujita, Sz and Fujita, Sg},
 issue = {15},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Apr},
 note = {We demonstrate that the nature of the interface between ZnSe and semi‐insulating GaAs can be studied by observing the phonon‐plasmon coupled mode by micro‐Raman spectroscopy. When the GaAs substrate is sulfur‐treated before the growth of ZnSe, the phonon‐plasmon coupled mode is clearly observed in micro‐Raman spectra. The plasmon is believed to be composed of electrons excited by the focused laser beam used in the micro‐Raman measurement. The coupled mode is weak when the substrate is not sulfur‐treated. The reduction in the coupled‐mode intensity will be due to interface states which widen the depletion layer and shorten the lifetime of excess carriers., application/pdf},
 pages = {1800--1802},
 title = {Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy},
 volume = {62},
 year = {1993},
 yomi = {イチムラ, マサヤ}
}