{"created":"2023-05-15T12:35:20.691819+00:00","id":4208,"links":{},"metadata":{"_buckets":{"deposit":"9e87ede4-4a50-4dac-be11-01c328f7903a"},"_deposit":{"created_by":3,"id":"4208","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4208"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004208","sets":["31"]},"author_link":["12373","11878","12368","3523","12372"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1993-04-12","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"15","bibliographicPageEnd":"1802","bibliographicPageStart":"1800","bibliographicVolumeNumber":"62","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We demonstrate that the nature of the interface between ZnSe and semi‐insulating GaAs can be studied by observing the phonon‐plasmon coupled mode by micro‐Raman spectroscopy. When the GaAs substrate is sulfur‐treated before the growth of ZnSe, the phonon‐plasmon coupled mode is clearly observed in micro‐Raman spectra. The plasmon is believed to be composed of electrons excited by the focused laser beam used in the micro‐Raman measurement. The coupled mode is weak when the substrate is not sulfur‐treated. The reduction in the coupled‐mode intensity will be due to interface states which widen the depletion layer and shorten the lifetime of excess carriers.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.109554"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.109554","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya"},{"creatorName":"イチムラ, マサヤ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Usami, A.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Wada, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujita, Sz","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fujita, Sg","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 62_1800.pdf","filesize":[{"value":"388.7 kB"}],"format":"application/pdf","license_note":"Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 62(15),pp.1800-1802 ; 1993 and may be found at http://link.aip.org/link/?apl/62/1800","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4208/files/APL 62_1800.pdf"},"version_id":"4950024e-4f41-46e5-9e03-520c8df73d3d"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4208","relation_version_is_last":true,"title":["Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:23:39.184245+00:00"}