{"created":"2023-05-15T12:35:21.195775+00:00","id":4220,"links":{},"metadata":{"_buckets":{"deposit":"cb04a129-5720-47e7-b9d1-fdf8132165dd"},"_deposit":{"created_by":91,"id":"4220","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4220"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004220","sets":["31"]},"author_link":["3523","3523","11985","12611","12612"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1993-06-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"11","bibliographicPageEnd":"7228","bibliographicPageStart":"7225","bibliographicVolumeNumber":"73","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We predict by theoretical calculation that the concentration of interstitial Li (Liint) in ZnSe can be decreased, i.e., the Li acceptor (LiZn) can be stabilized by above‐band‐gap photoirradiation. Creation of excess electrons by the irradiation increases the occupation probability of the Liint donor level and thus the concentration of neutral Liint (Liint0). Consequently, the LiZn concentration increases because of the reaction Liint0+VZn0→LiZn0, where VZn0 and LiZn0 are a neutral Zn vacancy and a neutral Li acceptor, respectively. The carrier injection through an electrical junction will have similar effects as the photoirradiation, and thus our results indicate that the Li acceptors tend to be stable in active regions of light‐emitting diodes and laser diodes.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.354034"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.354034","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Wada, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11985","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujita, Shizuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12611","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Fujita, Shigeo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12612","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 73_7225.pdf","filesize":[{"value":"450.1 kB"}],"format":"application/pdf","license_note":"Copyright (1993) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 73(11), pp.7225- 7228 ; 1993 and may be found at http://link.aip.org/link/?jap/73/7225","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4220/files/JAP 73_7225.pdf"},"version_id":"b7c31acc-dca9-4d97-9e0c-1fd1033f90db"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Stabilization  of Li acceptors in ZnSe by above-band-gap photoirradiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Stabilization  of Li acceptors in ZnSe by above-band-gap photoirradiation","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4220","relation_version_is_last":true,"title":["Stabilization  of Li acceptors in ZnSe by above-band-gap photoirradiation"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-13T05:57:51.022482+00:00"}