{"created":"2023-05-15T12:35:23.898509+00:00","id":4284,"links":{},"metadata":{"_buckets":{"deposit":"aa0271bf-b7be-4c3e-ad85-d5970e3e600d"},"_deposit":{"created_by":91,"id":"4284","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4284"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004284","sets":["31"]},"author_link":["3257","4028","4015","3257","12909","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-05-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"9","bibliographicPageEnd":"4514","bibliographicPageStart":"4510","bibliographicVolumeNumber":"75","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The lattice relaxation at the GaAs1-xPx/GaAs interface is observed using thickness fringe images in transmission electron microscopy. The bending of the equal thickness fringes observed near the interface is explained, assuming that crystal planes are inclined near the interface and that the inclination has a maximum at the interface. The magnitudes of inclination and the thickness of the strained region are estimated for various phosphorous composition and the GaAsP thickness. The lattice relaxation mechanisms for GaAsP on GaAs is described. It is indicated from the thickness fringe observation that the lattice relaxation occurs gradually beyond the critical thickness.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.355942"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.355942","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Inoue, Jiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12909","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 75_4510.pdf","filesize":[{"value":"529.6 kB"}],"format":"application/pdf","license_note":"Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 75(9), pp.4510- 4514 ; 1994 and may be found at http://link.aip.org/link/?jap/75/4510","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4284/files/JAP 75_4510.pdf"},"version_id":"34556e15-2bd9-4c35-872b-5a7a87d1b967"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Observation  of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Observation  of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4284","relation_version_is_last":true,"title":["Observation  of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-14T00:45:51.525431+00:00"}