Observation  of lattice relaxation at the GaAsP/GaAs interface beyond the critical thickness by transmission electron microscopy

JAP 75_4510

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lat lon distance

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JAP 75_4510.pdf

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JAP 75_4510.pdf (529.6 kB) sha256 338997f4ed84a12611eb8f14975363f6c0e7bba751bbfb4490aa60b1242dab53	Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 75(9), pp.4510- 4514 ; 1994 and may be found at http://link.aip.org/link/?jap/75/4510

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