{"created":"2023-05-15T12:35:24.024256+00:00","id":4287,"links":{},"metadata":{"_buckets":{"deposit":"ea7774c9-ba9a-485f-93fb-6b181d7e2536"},"_deposit":{"created_by":91,"id":"4287","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4287"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004287","sets":["31"]},"author_link":["3523","12923","3523","11985","12926"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1994-06-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"7868","bibliographicPageStart":"7866","bibliographicVolumeNumber":"75","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Crystalline quality in a void region of a bonded silicon‐on‐insulator (SOI) wafer is evaluated by micro‐Raman spectroscopy. Downshifting and broadening of the Si optical‐phonon peak are observed at the edge of the void, while spectra within the void are little different from those outside the void. Comparison with calculated results based on the theory of the phonon localization shows that both the shift and the broadening are mainly due to structural disorder and not strain. Electrical properties in a void region are also evaluated by a laser‐microwave method. The lifetime of excess carriers has its minimum value at the void edge. Those results consistently show that the SOI layer is deformed plastically rather than elastically at the boundary of the void.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_relation_34":{"attribute_name":"item_10001_relation_34","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.356570"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.356570","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Usami, Akira","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12923","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Wada, Takao","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"11985","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishigami, Shun-ichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12926","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 75_7866.pdf","filesize":[{"value":"337.2 kB"}],"format":"application/pdf","license_note":"Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 75(12), pp.7866- 7868 ; 1994 and may be found at http://link.aip.org/link/?jap/75/7866","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4287/files/JAP 75_7866.pdf"},"version_id":"5bdf60a5-f870-4ef2-b6bc-41800b4e296b"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4287","relation_version_is_last":true,"title":["Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-14T00:46:02.587081+00:00"}