Structural characterization of a bonded silicon-on-insulator layer with voids by micro-Raman spectroscopy

JAP 75_7866

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JAP 75_7866.pdf

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JAP 75_7866.pdf (337.2 kB) sha256 01de4840c73afc5a28c0ee0b54d5e122393ebb42280683be2f4ec12564efe908	Copyright (1994) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 75(12), pp.7866- 7868 ; 1994 and may be found at http://link.aip.org/link/?jap/75/7866

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