@article{oai:nitech.repo.nii.ac.jp:00004369,
 author = {Soga, Tetsuo and Kato, T. and Yang, M. and Umeno, Masayoshi and Jimbo, Takashi},
 issue = {6},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Sep},
 note = {The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27°C) under two‐terminal and four‐terminal configurations, respectively, is demonstrated., application/pdf},
 pages = {4196--4199},
 title = {High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition},
 volume = {78},
 year = {1995}
}