{"created":"2023-05-15T12:35:27.454566+00:00","id":4369,"links":{},"metadata":{"_buckets":{"deposit":"0ce6bcf4-9613-4722-a144-7a1e243929ae"},"_deposit":{"created_by":3,"id":"4369","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4369"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004369","sets":["31"]},"author_link":["4028","3257","13313","4015","13312"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-09-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"4199","bibliographicPageStart":"4196","bibliographicVolumeNumber":"78","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active‐area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active‐area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27°C) under two‐terminal and four‐terminal configurations, respectively, is demonstrated.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.359880"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.359880","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Kato, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yang, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 78_4196.pdf","filesize":[{"value":"430.1 kB"}],"format":"application/pdf","license_note":"Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 78(6), pp.4196- 4199 ; 1995 and may be found at http://link.aip.org/link/?jap/78/4196","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4369/files/JAP 78_4196.pdf"},"version_id":"23d67116-f7fb-4df1-858e-9bd76ef24d93"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4369","relation_version_is_last":true,"title":["High efficiency AIGaAs/Si monolithic tandem solar cell grown by metalorganic chemical vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:21:07.708747+00:00"}