{"created":"2023-05-15T12:35:27.719728+00:00","id":4375,"links":{},"metadata":{"_buckets":{"deposit":"2e4fb184-04c5-46c4-a71e-dafaf5f316bc"},"_deposit":{"created_by":91,"id":"4375","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4375"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004375","sets":["31"]},"author_link":["8780","8780","13336","13337","13338","13339"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-10-02","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"14","bibliographicPageEnd":"2053","bibliographicPageStart":"2052","bibliographicVolumeNumber":"67","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A p‐n junction has been formed in n‐type silicon carbide (6H-SiC) by aluminum (Al) doping at room temperature using a pulsed laser doping method. A 6H-SiC substrate in [H2+(CH3)3Al] atmosphere was irradiated by an KrF excimer laser of 20 ns full width at half‐maximum. The depth profile of Al determined by secondary ion mass spectroscopy showed a rectangularlike shape with a maximum concentration of 1×1022 Al/cm3. Furthermore, Al atoms were doped to a depth of about 0.05 μm from the surface. The current-voltage characteristics of the p‐n junction clearly showed the rectifying property with low leakage current.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"8780","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000010223679","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000010223679"}],"names":[{"name":"江龍, 修"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0003-6951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Eryu, Osamu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8780","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000010223679","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000010223679"}]},{"creatorNames":[{"creatorName":"Okuyama, Yasuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13336","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakashima, Kenshiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13337","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Toshitake","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13338","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Watanabe, Masanori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13339","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 67_2052.pdf","filesize":[{"value":"53.9 kB"}],"format":"application/pdf","license_note":"Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 67(14),pp.2052-2053 ; 1995 and may be found at http://link.aip.org/link/?apl/67/2052","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4375/files/APL 67_2052.pdf"},"version_id":"07f047fe-4dd3-4cfd-91d9-c0f48ab948b4"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4375","relation_version_is_last":true,"title":["Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-14T02:37:16.945776+00:00"}