Formation of a p-n junction in silicon carbide by aluminum doping at room temperature using a pulsed laser doping method

APL 67_2052

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APL 67_2052.pdf

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APL 67_2052.pdf (53.9 kB) sha256 6f2814e46d99f21743741c6e0a67525735985b178b572830e7f55943939d5eac	Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 67(14),pp.2052-2053 ; 1995 and may be found at http://link.aip.org/link/?apl/67/2052

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