{"created":"2023-05-15T12:35:27.885800+00:00","id":4379,"links":{},"metadata":{"_buckets":{"deposit":"3e12bed3-0516-4d2c-80ef-addbb0ecdd56"},"_deposit":{"created_by":3,"id":"4379","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4379"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004379","sets":["31"]},"author_link":["4015","522","12880","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1995-11-13","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"20","bibliographicPageEnd":"2997","bibliographicPageStart":"2995","bibliographicVolumeNumber":"67","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We have studied the rapid degradation of the AlGaAs/GaAs single quantum well laser diodes on Si substrates grown by metalorganic chemical vapor deposition. The dislocations propagate at velocities up to ～75 μm/h along 〈100〉 and ～20 μm/h along 〈110〉, which cause an increase in threshold current and a decrease in differential quantum efficiency. The degraded current-voltage characteristic resulted from the defect‐assisted impurity diffusion. The degradation process occurs very rapidly due to the presence of a high density of defects and thermally induced strain.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"affiliations":[{"affiliationNames":[{"affiliationName":"","lang":"ja"}],"nameIdentifiers":[{"nameIdentifier":"","nameIdentifierScheme":"ISNI","nameIdentifierURI":"http://www.isni.org/isni/"}]}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}],"names":[{"name":"Egawa, Takashi","nameLang":"en"},{"name":"江川, 孝志","nameLang":"ja"},{"name":"エガワ, タカシ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.114930"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.114930","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifier":"","affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationName":"","affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"},{"creatorName":"江川, 孝志","creatorNameLang":"ja"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"familyNames":[{},{},{}],"givenNames":[{},{},{}],"nameIdentifiers":[{"nameIdentifier":"522","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hasegawa, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"12880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 67_2995.pdf","filesize":[{"value":"144.6 kB"}],"format":"application/pdf","license_note":"Copyright (1995) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 67(20), pp.2995 - 2997; 1995 and may be found at http://link.aip.org/link/?apl/67/2995","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4379/files/APL 67_2995.pdf"},"version_id":"31385719-7a84-4dc4-b702-966fa20cd11f"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Degradation  mechanism of AlGaAs/GaAs laser diodes grown on Si substrates","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Degradation  mechanism of AlGaAs/GaAs laser diodes grown on Si substrates","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4379","relation_version_is_last":true,"title":["Degradation  mechanism of AlGaAs/GaAs laser diodes grown on Si substrates"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2024-08-30T07:28:21.010616+00:00"}