{"created":"2023-05-15T12:35:29.563678+00:00","id":4419,"links":{},"metadata":{"_buckets":{"deposit":"d9e0f321-4c51-4026-a84b-d7874f1f155e"},"_deposit":{"created_by":3,"id":"4419","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4419"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004419","sets":["31"]},"author_link":["3257","4015","13551","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-06-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"12","bibliographicPageEnd":"9378","bibliographicPageStart":"9375","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The effects of a thermal cycle annealing (TCA) process on the defects in GaAs and AlxGa1-xAs solar cells on Si substrates are described in this paper. The defect density is reduced and the solar cell efficiency is improved by TCA. The defect density and the solar cell efficiency are evaluated in detail with respect to TCA temperature and Al composition. The problems involved in the fabrication of a high efficiency AlGaAs solar cell on a Si substrate are discussed.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Kato, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 79_9375.pdf","filesize":[{"value":"193.0 kB"}],"format":"application/pdf","license_note":"Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 79(12), pp.9375-9378 ; 1996 and may be found at http://link.aip.org/link/?jap/79/9375","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4419/files/JAP 79_9375.pdf"},"version_id":"9dfa96ed-ec3c-42e8-b074-214a318fc2fd"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Photovoltaic properties of an AlxGa1-xAs solar cell (x=0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Photovoltaic properties of an AlxGa1-xAs solar cell (x=0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4419","relation_version_is_last":true,"title":["Photovoltaic properties of an AlxGa1-xAs solar cell (x=0-0.22) grown on Si substrate by metalorganic chemical vapor deposition and thermal cycle annealing"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:19:47.842216+00:00"}