@article{oai:nitech.repo.nii.ac.jp:00004433,
 author = {Egawa, Takashi and Ishikawa, H. and Jimbo, Takashi and Umeno, Masayoshi},
 issue = {6},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Aug},
 note = {We report an optical degradation of an InGaN/AlGaN double‐heterostructure light‐emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron‐beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent‐shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10-3, 1.9×10-3, and 3.9×10-3h-1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV., application/pdf},
 pages = {830--832},
 title = {Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition},
 volume = {69},
 year = {1996}
}