{"created":"2023-05-15T12:35:30.160068+00:00","id":4433,"links":{},"metadata":{"_buckets":{"deposit":"d5dbbe9e-271c-4b51-9cfa-efcd22ae3afa"},"_deposit":{"created_by":3,"id":"4433","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4433"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004433","sets":["31"]},"author_link":["522","13619","4015","4028"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-08-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"832","bibliographicPageStart":"830","bibliographicVolumeNumber":"69","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"We report an optical degradation of an InGaN/AlGaN double‐heterostructure light‐emitting diode (LED) on a sapphire substrate grown by metalorgonic chemical vapor deposition. Electroluminescence, electron‐beam induced current, and cathodoluminescence observations have shown that the degraded InGaN/AlGaN LED exhibits formation and propagation of dark spots and a crescent‐shaped dark patch, which act as nonradiative recombination centers. The values of degradation rate under injected current density of 0.1 kA/cm2 were determined to be 1.1×10-3, 1.9×10-3, and 3.9×10-3h-1 at ambient temperatures of 30, 50, and 80°C, respectively. The activation energy of degradation was also determined to be 0.23 eV.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.111896"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.111896","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 69_830.pdf","filesize":[{"value":"223.3 kB"}],"format":"application/pdf","license_note":"Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 69(6), pp.830 - 832; 1996 and may be found at http://link.aip.org/link/?apl/69/830","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4433/files/APL 69_830.pdf"},"version_id":"8f622574-09e1-43a8-b2ed-964b301484ca"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4433","relation_version_is_last":true,"title":["Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:19:47.264574+00:00"}