{"created":"2023-05-15T12:35:30.452711+00:00","id":4440,"links":{},"metadata":{"_buckets":{"deposit":"6c9572a4-41a1-4dee-bdb6-4cd614ad6346"},"_deposit":{"created_by":91,"id":"4440","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4440"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004440","sets":["31"]},"author_link":["3257","4028","4015","13651","3257","4028","4015"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1996-10-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"7","bibliographicPageEnd":"4115","bibliographicPageStart":"4112","bibliographicVolumeNumber":"80","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"High quality epitaxial layers of Al0.22Ga0.78As have been grown on Si substrates by adopting thermal cycle annealing. The quality of the Al0.22Ga0.78As has been assessed by photoluminescence, deep‐level transient spectroscopy, and double‐crystal x‐ray diffraction studies. The emergence of a new luminescence emission (1.718 eV), high concentrations of shallow levels, passivation of a deep level (0.43 eV), and dislocation reduction in the high‐temperature thermal cycle annealed samples have been explained by a silicon diffusion mechanism and the formation of complex point defects. Deep‐level emission at 0.64 eV has been attributed to disordering in the epitaxial layers.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}],"names":[{"name":"Soga, Tetsuo","nameLang":"en"},{"name":"曾我, 哲夫","nameLang":"ja"},{"name":"ソガ, テツオ","nameLang":"ja-Kana"}]},{"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Baskar, K.","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"13651","nameIdentifierScheme":"WEKO"}]},{"creatorAffiliations":[{"affiliationNameIdentifiers":[{"affiliationNameIdentifierScheme":"ISNI","affiliationNameIdentifierURI":"http://www.isni.org/isni/"}],"affiliationNames":[{"affiliationNameLang":"ja"}]}],"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"},{"creatorName":"曾我, 哲夫","creatorNameLang":"ja"},{"creatorName":"ソガ, テツオ","creatorNameLang":"ja-Kana"}],"familyNames":[{"familyName":"Soga","familyNameLang":"en"},{"familyName":"曾我","familyNameLang":"ja"},{"familyName":"ソガ","familyNameLang":"ja-Kana"}],"givenNames":[{"givenName":"Tetsuo","givenNameLang":"en"},{"givenName":"哲夫","givenNameLang":"ja"},{"givenName":"テツオ","givenNameLang":"ja-Kana"}],"nameIdentifiers":[{"nameIdentifier":"3257","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000020197007 ","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000020197007 "}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4015","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 80_4112.pdf","filesize":[{"value":"80.3 kB"}],"format":"application/pdf","license_note":"Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 80(7), pp.4112- 4115 ; 1996 and may be found at http://link.aip.org/link/?jap/80/4112","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4440/files/JAP 80_4112.pdf"},"version_id":"4f0636da-f52a-4837-a4a2-57410e388ee0"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Growth  of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Growth  of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4440","relation_version_is_last":true,"title":["Growth  of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-14T04:24:06.756734+00:00"}