Growth  of high quality Al0.22Ga0.78As layers on Si substrates by metalorganic chemical vapor deposition

JAP 80_4112

WEKO3

lat lon distance

[[sub_check.contents]]

[[sub_radio.contents]]

Field does not validate

[[sub_attr.contents]]　

JAP 80_4112.pdf

https://nitech.repo.nii.ac.jp/record/4440/files/JAP 80_4112.pdf

本文_fulltext

application/pdf

ファイル	ライセンス
JAP 80_4112.pdf (80.3 kB) sha256 b1a0c63c253b5b899804c6aa1c4da57836f23816526272003e8ac6b7c05bdaa9	Copyright (1996) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 80(7), pp.4112- 4115 ; 1996 and may be found at http://link.aip.org/link/?jap/80/4112

Version	Date Modified	Object File Name	File Size	File Hash Value	Contributor Name	Show/Hide

Downloads

Plays