@article{oai:nitech.repo.nii.ac.jp:00004484,
 author = {Ichimura, Masaya and Tajiri, H. and Morita, Y. and Yamada, N. and Usami, A.},
 issue = {13},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Mar},
 note = {Excess carrier lifetime of 3C-SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact microwave photoconductivity decay method. A N2 laser is used to excite carriers in the SiC layer. The measured decay curves of the excess carrier concentration have fast (τ?3 μs) and slow (τ>200 μs) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and the presence of traps with a very small electron capture cross section (<1×10-21cm2) is predicted., application/pdf},
 pages = {1745--1747},
 title = {Excess  carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method},
 volume = {70},
 year = {1997}
}