{"created":"2023-05-15T12:35:32.292080+00:00","id":4484,"links":{},"metadata":{"_buckets":{"deposit":"f838114e-fd87-451b-95ba-7d1f4fb01f72"},"_deposit":{"created_by":3,"id":"4484","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4484"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004484","sets":["31"]},"author_link":["13874","12368","3523","13876","13875"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-03-31","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"13","bibliographicPageEnd":"1747","bibliographicPageStart":"1745","bibliographicVolumeNumber":"70","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Excess carrier lifetime of 3C-SiC grown on a Si substrate by chemical vapor deposition is measured at room temperature by the noncontact microwave photoconductivity decay method. A N2 laser is used to excite carriers in the SiC layer. The measured decay curves of the excess carrier concentration have fast (τ?3 μs) and slow (τ>200 μs) components. The origin of the slow decay is discussed on the basis of the numerical simulation of the recombination process, and the presence of traps with a very small electron capture cross section (<1×10-21cm2) is predicted.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543431","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Tajiri, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Morita, Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yamada, N.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Usami, A.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 70_1745.pdf","filesize":[{"value":"81.1 kB"}],"format":"application/pdf","license_note":"Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 70(13),pp.1745-1747 ; 1997 and may be found at http://link.aip.org/link/?apl/70/1745","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4484/files/APL 70_1745.pdf"},"version_id":"518a2dd6-fd37-40dd-a280-179d47676b10"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Excess  carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Excess  carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4484","relation_version_is_last":true,"title":["Excess  carrier lifetime of 3C-SiC measured by the microwave photoconductivity decay method"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:18:46.376745+00:00"}