{"created":"2023-05-15T12:35:33.531752+00:00","id":4513,"links":{},"metadata":{"_buckets":{"deposit":"e1181074-3f11-425a-80f8-5da836736b93"},"_deposit":{"created_by":3,"id":"4513","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4513"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004513","sets":["31"]},"author_link":["14013","14016","14012","14014","14015","8562"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-09-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"1912","bibliographicPageStart":"1909","bibliographicVolumeNumber":"79","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"An anomalous negative temperature dependence of electrical resistivity has been observed in (Fe1-xVx)3Al alloys with V compositions up to x = 0.35. In particular, the Heusler-type Fe2VAl compound is found to be on the verge of magnetic ordering and to exhibit a semiconductorlike behavior with the resistivity reaching 3000 μΩ cm at 2 K, in spite of the possession of a clear Fermi cutoff as revealed in photoemission valence-band spectra. A substantial mass enhancement deduced from specific heat measurements suggests that Fe2VAl is a possible candidate for a 3d heavy-fermion system.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"西野, 洋一"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00319007","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00773679","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nishino, Yoichi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kato, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Asano, S.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soda, K.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayasaki, M.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Mizutani, U.","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"PRL 79_1909.pdf","filesize":[{"value":"122.4 kB"}],"format":"application/pdf","license_note":"(c)1997 The American Physical Society","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4513/files/PRL 79_1909.pdf"},"version_id":"601919bf-35c1-476a-b730-3ae3ca7cd22e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Semiconductorlike Behavior of Electrical Resistivity in Heusler-type Fe2VAl Compound","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Semiconductorlike Behavior of Electrical Resistivity in Heusler-type Fe2VAl Compound","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4513","relation_version_is_last":true,"title":["Semiconductorlike Behavior of Electrical Resistivity in Heusler-type Fe2VAl Compound"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2023-05-16T14:45:36.885208+00:00"}