{"created":"2023-05-15T12:35:33.909613+00:00","id":4522,"links":{},"metadata":{"_buckets":{"deposit":"87a3104f-bd56-4f3c-98e4-f60ea959c51e"},"_deposit":{"created_by":3,"id":"4522","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4522"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004522","sets":["31"]},"author_link":["522","13921","4028","4015","13927","14056"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-10-27","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"17","bibliographicPageEnd":"2426","bibliographicPageStart":"2424","bibliographicVolumeNumber":"71","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The emission spectrum of a current injected InGaN/AlGaN surface emitting diode has been investigated. A clear redshift of the low energy edge with increasing injected current has been observed, and is attributed to the many body effects. The carrier density and band gap narrowing are obtained by fitting the line shape of the emission spectrum, using Landsberg model which includes many body effects. A redshift of around 92 meV of the low energy edge is obtained as injected current increases from 400 to 4000 mA. The band gap change can be described well in proportion to the 1/3 power of the carrier density, which is just suggested by the exchange energy of electron-electron, and hole-hole interactions.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Zhao, G. Y.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Yu, G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Watanabe, J.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 71_2424.pdf","filesize":[{"value":"78.1 kB"}],"format":"application/pdf","license_note":"Copyright (1997) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 71(17), pp.2424 - 2426; 1997 and may be found at http://link.aip.org/link/?apl/71/2424","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4522/files/APL 71_2424.pdf"},"version_id":"9de98e13-c403-4336-be04-3a720acbee8e"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Energy-gap narrowing in a current injected InGaN/AIGaN surface light emitting diode","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Energy-gap narrowing in a current injected InGaN/AIGaN surface light emitting diode","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4522","relation_version_is_last":true,"title":["Energy-gap narrowing in a current injected InGaN/AIGaN surface light emitting diode"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:18:11.934587+00:00"}