{"created":"2023-05-15T12:35:34.289104+00:00","id":4531,"links":{},"metadata":{"_buckets":{"deposit":"85d3b89c-1d42-4c44-9740-bb05051a3341"},"_deposit":{"created_by":91,"id":"4531","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4531"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004531","sets":["31"]},"author_link":["14108","8667","14106","8667"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1997-12-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"22","bibliographicPageEnd":"R14238","bibliographicPageStart":"R14235","bibliographicVolumeNumber":"56","bibliographic_titles":[{"bibliographic_title":"PHYSICAL REVIEW B","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Persistent spectral hole burning (PSHB) was observed at temperatures higher than 77 K in the sol-gel-derived Eu3+-doped SiO2 glasses. 1Eu2O3・99SiO2 (mole ratio) glass was prepared by heating gel synthesized from metal alkoxides at 400 to 1000 °C. The hole  was burned in the 7F0→5D0 line of Eu3+ ions by means of a Rhodumine 6G dye laser at 77 K and the burnt hole depth was measured as a function of temperature. The hole depth increased with increasing OH content in the glass. It was found that the hole burnt at 77 K was thermally filled and an average thermal barrier height for the hole filling was ?0.3 eV, which was higher for the glass heated at high temperature, indicating that the stable hole is burned with the increased heat-treatment temperature. It was concluded that the PSHB was formed by the optically activated rearrangement of proton in the first coordinating sphere of the Eu3+ ions.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"14108","nameIdentifierScheme":"WEKO"}],"names":[{"name":"野上, 正行"}]},{"nameIdentifiers":[{"nameIdentifier":"8667","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000000293746","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000000293746"}],"names":[{"name":"早川, 知克"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0163-1829","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00362255","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nogami, Masayuki","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14106","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hayakawa, Tomokatsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"8667","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000000293746","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000000293746"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"PRB 56_R14235.pdf","filesize":[{"value":"109.2 kB"}],"format":"application/pdf","license_note":"(c)1997 The American Physical Society","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4531/files/PRB 56_R14235.pdf"},"version_id":"d27a955a-e8da-4918-a13d-8027583db520"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Persistent spectral hole burning of sol-gel-derived Eu3+-doped SiO2 glass","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Persistent spectral hole burning of sol-gel-derived Eu3+-doped SiO2 glass","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4531","relation_version_is_last":true,"title":["Persistent spectral hole burning of sol-gel-derived Eu3+-doped SiO2 glass"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-10T02:12:24.131434+00:00"}