{"created":"2023-05-15T12:35:34.664823+00:00","id":4540,"links":{},"metadata":{"_buckets":{"deposit":"14a542c8-820b-4b44-b120-e5073606e206"},"_deposit":{"created_by":3,"id":"4540","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4540"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004540","sets":["31"]},"author_link":["14161","4028","14159","5827","3257","4015","14164"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-01-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"180","bibliographicPageStart":"174","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Thin films of Si1-xGex alloys of different compositions x have been deposited, on single-crystal Si (100) surface and glass substrates, by simple ion beam sputtering, at room temperature. Crystallization of these films has been done using excimer laser annealing. Structural and optical properties of as-deposited and annealed Si1-xGex alloy films are characterized by x-ray diffraction (XRD), uv-visible spectrophotometry, spectroscopic ellipsometry (SE), and Auger electron spectroscopy (AES). The as-deposited films, both on Si and glass, have been found to be amorphous by XRD. Polycrystalline nature of laser-annealed samples has been evidenced by both x-ray and SE measurements. The results of x-ray, uv-visible, AES, and SE are compared and discussed. The poly-Si1-xGex films were oriented predominantly to (111) and the grain sizes were determined from half-width of x-ray peaks. The compositions x of Si1-xGex films have been evaluated from the SE dielectric function ?(ω) data, using the second-derivative technique, and are found to be 0.23 and 0.36 for two different compositions. A detailed analysis of ?(ω) with the effective-medium theory has demonstrated the volume fraction of crystalline Si1-xGex increases with the increasing energy of laser irradiation.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yu, Guolin","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Krishna, Kalaga Murali","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Shao, Chunlin Hong","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Watanabe, Junji","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 83_174.pdf","filesize":[{"value":"162.3 kB"}],"format":"application/pdf","license_note":"Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 83(1), pp.174- 180 ; 1998 and may be found at http://link.aip.org/link/?jap/83/174","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4540/files/JAP 83_174.pdf"},"version_id":"694b8aad-187d-4b56-98fa-4be0caab1a37"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Characterization of excimer laser annealed polycrystalline Si1-xGex  alloy thin films by x-ray diffraction and spectroscopic ellipsometry","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Characterization of excimer laser annealed polycrystalline Si1-xGex  alloy thin films by x-ray diffraction and spectroscopic ellipsometry","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4540","relation_version_is_last":true,"title":["Characterization of excimer laser annealed polycrystalline Si1-xGex  alloy thin films by x-ray diffraction and spectroscopic ellipsometry"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:17:44.985631+00:00"}