@article{oai:nitech.repo.nii.ac.jp:00004554,
 author = {Niraula, Madan and Aoki, Toru and Nakanishi, Yoichiro and Hatanaka, Yoshinori},
 issue = {5},
 journal = {JOURNAL OF APPLIED PHYSICS},
 month = {Mar},
 note = {The growth and carrier transport mechanism in CdTe on the GaAs substrate is reported. Epitaxial layers of CdTe were grown on n- and semi-insulating GaAs substrates by the hydrogen radical assisted metalorganic chemical vapor deposition technique at a low pressure. Dimethylcadmium and diethyltelluride were used as the source materials. The growth was carried out in the substrate temperature range of 150-300°C. The grown films have high resistivity in the order of 107Ωcm for the entire growth range. Applicability of this heteroepitaxial CdTe layer on n-GaAs as an x-ray detector was then investigated. The carrier transport mechanism of the CdTe/n-GaAs heterojunction was studied by means of current-voltage measurements at different temperatures. The forward current was characterized by multitunneling capture-emission current and space charge limited current. The reverse current was considered as the generation current from the heterojunction interface states through the analysis of capacitance-voltage measurement. It is found that for devices using minority carriers, this heterojunction alone is not useful because of the high concentration of interface states. A suitable modification, like an isotype heterojunction between GaAs and CdTe before forming the p-n junction, seems to be necessary., application/pdf},
 pages = {2656--2661},
 title = {Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction},
 volume = {83},
 year = {1998}
}