{"created":"2023-05-15T12:35:35.255967+00:00","id":4554,"links":{},"metadata":{"_buckets":{"deposit":"cad4cf14-5d74-4bbe-8666-3c420105675f"},"_deposit":{"created_by":3,"id":"4554","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4554"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004554","sets":["31"]},"author_link":["14239","14240","14238","8594"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-03-01","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"5","bibliographicPageEnd":"2661","bibliographicPageStart":"2656","bibliographicVolumeNumber":"83","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"The growth and carrier transport mechanism in CdTe on the GaAs substrate is reported. Epitaxial layers of CdTe were grown on n- and semi-insulating GaAs substrates by the hydrogen radical assisted metalorganic chemical vapor deposition technique at a low pressure. Dimethylcadmium and diethyltelluride were used as the source materials. The growth was carried out in the substrate temperature range of 150-300°C. The grown films have high resistivity in the order of 107Ωcm for the entire growth range. Applicability of this heteroepitaxial CdTe layer on n-GaAs as an x-ray detector was then investigated. The carrier transport mechanism of the CdTe/n-GaAs heterojunction was studied by means of current-voltage measurements at different temperatures. The forward current was characterized by multitunneling capture-emission current and space charge limited current. The reverse current was considered as the generation current from the heterojunction interface states through the analysis of capacitance-voltage measurement. It is found that for devices using minority carriers, this heterojunction alone is not useful because of the high concentration of interface states. A suitable modification, like an isotype heterojunction between GaAs and CdTe before forming the p-n junction, seems to be necessary.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"ニラウラ, マダン"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.367028"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.367028","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00218979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Niraula, Madan","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Aoki, Toru","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Nakanishi, Yoichiro","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hatanaka, Yoshinori","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"JAP 83_2656.pdf","filesize":[{"value":"109.3 kB"}],"format":"application/pdf","license_note":"Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 83(5), pp.2656-2661; 1998  and may be found at http://link.aip.org/link/?jap/83/2656","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4554/files/JAP 83_2656.pdf"},"version_id":"b9157319-724e-4680-ad85-12b5a1d46496"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4554","relation_version_is_last":true,"title":["Radical assisted metalorganic chemical vapor deposition of CdTe on GaAs and carrier transport mechanism in CdTe/n-GaAs heterojunction"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:17:24.430735+00:00"}