{"created":"2023-05-15T12:35:35.551951+00:00","id":4561,"links":{},"metadata":{"_buckets":{"deposit":"ce50f679-8df0-4acc-9813-21c0f6d56371"},"_deposit":{"created_by":3,"id":"4561","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4561"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004561","sets":["31"]},"author_link":["522","13921","4028","4015","3257","13927","13619"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1998-05-04","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"18","bibliographicPageEnd":"2204","bibliographicPageStart":"2202","bibliographicVolumeNumber":"72","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A method of analysis of spectroscopic ellipsometry (SE) measurement data is proposed for AlxGa1-xN/GaN heterostructures grown on sapphire substrates. The SE data measured at three angles of incidence, 40°, 50°, and 60°, are simultaneously fitted assuming the dielectric function to consist of a Sellmeir dispersion equation and a free-exciton absorption term. The refractive index n and the extinction coefficient k of undoped AlxGa1-xN films are determined in the spectral range of 1.5-4.13 eV of photon energy. The transition energy of the free exciton, which is in excellent agreement with the reported results for GaN in a previous paper, is found to vary from 3.44 to 3.95 eV when the composition x varies from 0 to 0.151. The refractive index n of AlxGa1-xN has also been compared with those reported results.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"江川, 孝志"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_relation_34":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"10.1063/1.121322"}],"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"http://dx.doi.org/10.1063/1.121322","subitem_relation_type_select":"DOI"}}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Yu, G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ishikawa, H.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Egawa, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Watanabe, J.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-23"}],"displaytype":"detail","filename":"APL 72_2202.pdf","filesize":[{"value":"95.2 kB"}],"format":"application/pdf","license_note":"Copyright (1998) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 72(18), pp.2202-2204; 1998 and may be found at http://link.aip.org/link/?apl/72/2202","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4561/files/APL 72_2202.pdf"},"version_id":"6069fdd1-6788-4ca8-b15d-64c164a186f3"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4561","relation_version_is_last":true,"title":["Optical properties of AlxGa1-xN/GaN heterostructures on sapphire by spectroscopic ellipsometry"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-16T14:17:04.187630+00:00"}