{"created":"2023-05-15T12:35:41.327264+00:00","id":4700,"links":{},"metadata":{"_buckets":{"deposit":"fbb0c73d-8a73-4f9f-a081-4bf6fa1d6284"},"_deposit":{"created_by":91,"id":"4700","owners":[91],"pid":{"revision_id":0,"type":"depid","value":"4700"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004700","sets":["31"]},"author_link":["3523","3523","14991","4387"],"item_10001_biblio_info_28":{"attribute_name":"bibliographic_information","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-05-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"10","bibliographicPageEnd":"7417","bibliographicPageStart":"7411","bibliographicVolumeNumber":"85","bibliographic_titles":[{"bibliographic_title":"JOURNAL OF APPLIED PHYSICS","bibliographic_titleLang":"en"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"CdS thin films are grown by photochemical deposition from an aqueous solution and characterized by x-ray diffraction (XRD), Raman spectroscopy, photoluminescence measurement, and optical transmission spectroscopy. The films are deposited at room temperature and annealed at temperatures up to 500°C. The as-deposited film is dominantly zinc blende cubic. The cubic phase remains dominant until the annealing temperature becomes higher than 400°C. By the annealing at 450°C, the XRD pattern turns to that of hexagonal phase. Moreover, its peak width decreases and the near-band-edge luminescence begins to be observed. The band gap is decreased by annealing below 400°C and then abruptly increased by the annealing at 450°C. This annealing behavior of the band gap is interpreted considering the quantum size effects, the band tail due to disorder, and the cubic-hexagonal transition.","subitem_description_language":"en","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}],"names":[{"name":"市村, 正也"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics","subitem_publisher_language":"en"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-8979","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"item_10001_source_id_32","attribute_value_mlt":[{"subitem_source_identifier":"AA00693547","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"出版タイプ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ichimura, Masaya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"3523","nameIdentifierScheme":"WEKO"},{"nameIdentifier":"1000030203110","nameIdentifierScheme":"NRID","nameIdentifierURI":"http://rns.nii.ac.jp/nr/1000030203110"}]},{"creatorNames":[{"creatorName":"Goto, Fumitaka","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"14991","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Arai, Eisuke","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"4387","nameIdentifierScheme":"WEKO"}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-24"}],"displaytype":"detail","filename":"JAP 85_7411.pdf","filesize":[{"value":"263.0 kB"}],"format":"application/pdf","license_note":"Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Journal of Applied Physics, 85(10),pp.7411-7417; 1999 and may be found at http://link.aip.org/link/?jap/85/7411","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4700/files/JAP 85_7411.pdf"},"version_id":"bf811576-df19-4fef-b2ab-2b2a20581790"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"item_resource_type","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Structural and optical characterization of CdS films grown by photochemical deposition","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Structural and optical characterization of CdS films grown by photochemical deposition","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"91","path":["31"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4700","relation_version_is_last":true,"title":["Structural and optical characterization of CdS films grown by photochemical deposition"],"weko_creator_id":"91","weko_shared_id":-1},"updated":"2025-03-17T04:20:19.863079+00:00"}