@article{oai:nitech.repo.nii.ac.jp:00004747,
 author = {Niraula, Madan and Mochizuki, Daisuke and Aoki, Toru and Hatanaka, Yoshinori and Tomita, Yasuhiro and Nihashi, Tokuaki},
 issue = {15},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Oct},
 note = {CdTe radiation detectors were fabricated using a p-i-n design and a significant improvement in the spectral properties was obtained during room temperature operation. An iodine doped n-CdTe layer was grown on the Te faces of the (111) oriented high resistivity CdTe crystals at the low substrate temperature of 150°C. An aluminum electrode was evaporated on the n-CdTe side for the n-type contact, while a gold electrode on the opposite side acted as the p-type contact. Very low leakage currents, typically 60 pA/mm2, were attained at room temperature (25°C) for an applied reverse bias of 250 V. Detectors exhibited excellent spectral responses with an energy resolution of 1.42, 1.7, and 4.2 keV FWHM at 59.5, 122, and 662 keV γ peaks, respectively., application/pdf},
 pages = {2322--2324},
 title = {Improved spectrometric performance of CdTe radiation detectors in a p-i -n design},
 volume = {75},
 year = {1999}
}