{"created":"2023-05-15T12:35:43.534295+00:00","id":4753,"links":{},"metadata":{"_buckets":{"deposit":"35dea5c4-114d-4e26-a9fc-3cf0bfff913a"},"_deposit":{"created_by":3,"id":"4753","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4753"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004753","sets":["31"]},"author_link":["15272","8667","15273","15270"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"1999-11-15","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"20","bibliographicPageEnd":"3074","bibliographicPageStart":"3072","bibliographicVolumeNumber":"75","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"Persistent spectral hole burning was observed at room temperature in Eu3+-doped Al2O3-SiO2 glass. The glass was obtained by heating in hydrogen gas to reduce some Eu3+ ions to Eu2+ and the spectral hole was burned in the excitation spectrum of the 7F0→5D0 transition of Eu3+. The depth of the hole burned at 200 K was ?7% of the total excitation intensity and independent of temperature up to 350 K. A possible mechanism for hole burning is the electron transfer between the Eu3+ ions and the Al-related defect centers.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"野上, 正行"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"早川, 知克"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Nogami, Masayuki","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Hayakawa, Tomokatsu","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Ishikawa, Tomotaka","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-24"}],"displaytype":"detail","filename":"APL 75_3072.pdf","filesize":[{"value":"58.1 kB"}],"format":"application/pdf","license_note":"Copyright (1999) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 75(20),pp.3072 - 3074; 1999 and may be found at http://link.aip.org/link/?apl/75/3072","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4753/files/APL 75_3072.pdf"},"version_id":"c16d09d3-63ce-414b-a88e-bb7086219a57"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Room-temperature photochemical hole burning in Eu3+ -doped Al2O3-SiO2 glass","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Room-temperature photochemical hole burning in Eu3+ -doped Al2O3-SiO2 glass","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4753","relation_version_is_last":true,"title":["Room-temperature photochemical hole burning in Eu3+ -doped Al2O3-SiO2 glass"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:49:17.208644+00:00"}