@article{oai:nitech.repo.nii.ac.jp:00004761,
 author = {Arokiaraj, J. and Soga, Tetsuo and Jimbo, Takashi and Umeno, Masayoshi},
 issue = {24},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Dec},
 note = {In this letter, we demonstrate the realization of strong bonding between GaAs epilayers on Si substrates by using selenium sulphide (SeS2) compound. After bonding, the sample has been transplanted to Si substrate using the epitaxial lift-off process. Such a transplanted film was found to be very smooth and adhered well to Si. The resulting chemical bond was covalent in nature, robust, and withstood clean room processing steps. The film bonded in this manner exhibited very good photoluminescence and high crystal quality by double crystal x-ray diffraction. The double crystal x-ray diffraction had a low full width at half maximum of 44 arcsec, and the strain was absent in these types of heterostructures. The interfacial chemical reaction and bonding were studied by depth profile x-ray photoelectron spectroscopy. It was concluded that Ga-Se and Si-S phases such as Ga2Se3 and SiS2 were responsible for the strong bonding between GaAs and Si., application/pdf},
 pages = {3826--3828},
 title = {High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2},
 volume = {75},
 year = {1999}
}