@article{oai:nitech.repo.nii.ac.jp:00004768,
 author = {Egawa, Takashi and Ishikawa, H. and Umeno, Masayoshi and Jimbo, Takashi},
 issue = {1},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jan},
 note = {A recessed gate AlGaN/GaN modulation-doped field-effect transistor (MODFET) has been grown on a sapphire substrate by metalorganic chemical vapor deposition. The two-dimensional electron gas mobility as high as 9260 cm2/Vs with the sheet carrier density 4.8×1012cm-2 was measured at 4.6 K for the AlGaN/GaN heterostructure on the sapphire substrate. The recessed gate device showed the maximum extrinsic transconductance 146 mS/mm and drain-source current 900 mA/mm for the AlGaN/GaN MODFET with a gate length 2.1 μm at 25°C. At an elevated temperature of 350°C, the maximum extrinsic transconductance and drain-source current were 62 mS/mm and 347 mA/mm, respectively., application/pdf},
 pages = {121--123},
 title = {Recessed  gate AlGaN/GaN modulation-doped field-effect transistors on sapphire},
 volume = {76},
 year = {2000}
}