@article{oai:nitech.repo.nii.ac.jp:00004782,
 author = {Wang, G. and Ogawa, T. and Umeno, Masayoshi and Soga, Tetsuo and Jimbo, Takashi},
 issue = {6},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Feb},
 note = {A promising passivation method for GaAs solar cell grown on Si substrate (GaAs/Si solar cell) by phosphine-added hydrogen (PH3/H2) plasma exposure has been envisaged. The defect-hydrogenation and the surface-phosphidization effects of GaAs/Si solar cell are realized simultaneously by this single passivation process. Consequently, surface recombination states are reduced and the minority carrier lifetime is increased, resulting in a significant reduction in saturation current density (J0) of the GaAs/Si p-n junction. High open-circuit voltage (0.93 V) and fill factor (80.9%) are obtained for the PH3 plasma exposed GaAs/Si solar cells. As a result, the conversion efficiency is increased from 15.9% to 18.6%. This approach provides a simple and effective method to improve the photovoltaic properties of GaAs/Si solar cell., application/pdf},
 pages = {730--732},
 title = {Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3  plasma},
 volume = {76},
 year = {2000}
}