{"created":"2023-05-15T12:35:44.785769+00:00","id":4782,"links":{},"metadata":{"_buckets":{"deposit":"0e641e8b-c329-4ec8-9b06-18d677ec4c7a"},"_deposit":{"created_by":3,"id":"4782","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4782"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004782","sets":["31"]},"author_link":["13922","4028","15423","3257","4015"],"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-02-07","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"6","bibliographicPageEnd":"732","bibliographicPageStart":"730","bibliographicVolumeNumber":"76","bibliographic_titles":[{"bibliographic_title":"APPLIED PHYSICS LETTERS"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"A promising passivation method for GaAs solar cell grown on Si substrate (GaAs/Si solar cell) by phosphine-added hydrogen (PH3/H2) plasma exposure has been envisaged. The defect-hydrogenation and the surface-phosphidization effects of GaAs/Si solar cell are realized simultaneously by this single passivation process. Consequently, surface recombination states are reduced and the minority carrier lifetime is increased, resulting in a significant reduction in saturation current density (J0) of the GaAs/Si p-n junction. High open-circuit voltage (0.93 V) and fill factor (80.9%) are obtained for the PH3 plasma exposed GaAs/Si solar cells. As a result, the conversion efficiency is increased from 15.9% to 18.6%. This approach provides a simple and effective method to improve the photovoltaic properties of GaAs/Si solar cell.","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{}],"names":[{"name":"梅野, 正義"}]},{"nameIdentifiers":[{},{}],"names":[{"name":"曾我, 哲夫"}]},{"nameIdentifiers":[{}],"names":[{"name":"神保, 孝志"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Institute of Physics"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00036951","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA00543432","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Wang, G.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Ogawa, T.","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Umeno, Masayoshi","creatorNameLang":"en"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Soga, Tetsuo","creatorNameLang":"en"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"Jimbo, Takashi","creatorNameLang":"en"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-24"}],"displaytype":"detail","filename":"APL 76_730.pdf","filesize":[{"value":"58.8 kB"}],"format":"application/pdf","license_note":"Copyright (2000) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied physics letters, 76(6), pp.730-732; 2000 and may be found at http://link.aip.org/link/?apl/76/730","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4782/files/APL 76_730.pdf"},"version_id":"218f7de8-c54a-4af3-acfd-b02bb5381839"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3  plasma","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3  plasma","subitem_title_language":"en"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4782","relation_version_is_last":true,"title":["Surface and bulk passivation of GaAs solar cell on Si substrate by H2+PH3  plasma"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:47:35.509280+00:00"}