{"created":"2023-05-15T12:35:46.208749+00:00","id":4816,"links":{},"metadata":{"_buckets":{"deposit":"7a738043-6186-46b4-8de0-3bf5e2e5f0f9"},"_deposit":{"created_by":3,"id":"4816","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"4816"},"status":"published"},"_oai":{"id":"oai:nitech.repo.nii.ac.jp:00004816","sets":["31"]},"author_link":["522","4028","15616","4015","15617"],"item_10001_alternative_title_24":{"attribute_name":"その他（別言語等）のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"リセスゲート　オモチイタ　サファイア　キバンジョウ　ノ　AlGaN/GaN 　HEMT　ノ　ショトクセイ"},{"subitem_alternative_title":"Characteristics of Recessed Gate AlGaN/GaN HEMTs on Sapphire Substrate"}]},"item_10001_biblio_info_28":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2000-04-20","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"4","bibliographicPageEnd":"260","bibliographicPageStart":"253","bibliographicVolumeNumber":"J83-C","bibliographic_titles":[{"bibliographic_title":"電子情報通信学会論文誌. C, エレクトロニクス"}]}]},"item_10001_description_36":{"attribute_name":"内容記述","attribute_value_mlt":[{"subitem_description":"サファイア基板上に有機金属気相成長(MOCVD)法を用いてAlGaN/GaNヘテロ構造を成長し，更にリセスゲートプロセスを用いてAlGaN/GaN高電子移動度トランジスタ(HEMT)を作製した．50K以下の低温にてシートキャリヤ密度が一定になる2次元電子ガス特有の特性が観察された．8.9Kにおいて移動度は12000cm2/Vs，シートキャリヤ密度は2.8×1012cm-2であった．このような高品質の薄膜に変調ドープを行い，リアクティブイオンエッチング(RIE)によるリセスゲートプロセスを用いて作製したゲート長 2.1μmのAlGaN/GaN HEMTは，25°Cにて相互コンダクタンス146mS/mm，ドレーン電流900mA/mmの良好な特性が得られた．350°Cでは，相互コンダクタンスが62mS/mmと低下したが，良好なピンチオフ特性及び飽和特性を示した．また，25°C及び350°Cでのしきい値電圧の変化は0.3Vと非常に小さく，AC動作時での顕著な電流コラプスは観測されなかった．","subitem_description_type":"Other"}]},"item_10001_description_38":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_10001_full_name_27":{"attribute_name":"著者別名","attribute_value_mlt":[{"nameIdentifiers":[{},{}],"names":[{"name":"Egawa, Takashi"}]},{"nameIdentifiers":[{}],"names":[{"name":"Jimbo, Takashi"}]},{"nameIdentifiers":[{}],"names":[{"name":"Umeno, Masayoshi"}]}]},"item_10001_publisher_29":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Institute of Electronics, Information and Communication Engineers"}]},"item_10001_source_id_30":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"13452827","subitem_source_identifier_type":"ISSN"}]},"item_10001_source_id_32":{"attribute_name":"書誌レコードID（NCID）","attribute_value_mlt":[{"subitem_source_identifier":"AA11412446","subitem_source_identifier_type":"NCID"}]},"item_10001_version_type_33":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"江川, 孝志"},{"creatorName":"エガワ, タカシ","creatorNameLang":"ja-Kana"}],"nameIdentifiers":[{},{}]},{"creatorNames":[{"creatorName":"石川, 博康"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"趙, 廣元"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"神保, 孝志"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"梅野, 正義"}],"nameIdentifiers":[{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-01-24"}],"displaytype":"detail","filename":"J83-C_253.pdf","filesize":[{"value":"433.6 kB"}],"format":"application/pdf","license_note":"Copyright (c) 2000 IEICE　http://search.ieice.org/index.html","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"本文_fulltext","url":"https://nitech.repo.nii.ac.jp/record/4816/files/J83-C_253.pdf"},"version_id":"327ab840-5d3c-4d7a-9d74-83fe33b88c4b"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"リセスゲートを用いたサファイア基板上のAlGaN/GaN HEMTの諸特性","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"リセスゲートを用いたサファイア基板上のAlGaN/GaN HEMTの諸特性"}]},"item_type_id":"10001","owner":"3","path":["31"],"pubdate":{"attribute_name":"公開日","attribute_value":"2012-11-06"},"publish_date":"2012-11-06","publish_status":"0","recid":"4816","relation_version_is_last":true,"title":["リセスゲートを用いたサファイア基板上のAlGaN/GaN HEMTの諸特性"],"weko_creator_id":"3","weko_shared_id":3},"updated":"2023-05-15T14:43:13.253842+00:00"}