@article{oai:nitech.repo.nii.ac.jp:00004835,
 author = {Nozokido, Tatsuo and Bae, Jongsuck and Mizuno, Koji},
 issue = {1},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Jul},
 note = {Visualization of transition phenomena of photoexcited free carriers by scanning near-field millimeter-wave microscopy has been demonstrated. A scanning millimeter-wave microscope using a metal slit-type probe and an image reconstruction algorithm based on computerized tomographic imaging has been used in the experiment to achieve two-dimensional time-resolved imaging. Experiments performed at 60 GHz (λ = 5mm) under room temperature conditions show that generation, extinction, and diffusion processes of photoexcited free carriers generated in the silicon layer of a silicon on quartz substrate can be imaged with a time division of one nanosecond and a spatial resolution of 110 μm ( ? λ/45)., application/pdf},
 pages = {148--150},
 title = {Visualization of photoexcited free carriers by scanning near-field millimeter-wave microscopy},
 volume = {77},
 year = {2000}
}