@article{oai:nitech.repo.nii.ac.jp:00004864,
 author = {Krishna, K. M. and Umeno, Masayoshi and Nukaya, Y. and Soga, Tetsuo and Jimbo, Takashi},
 issue = {10},
 journal = {APPLIED PHYSICS LETTERS},
 month = {Sep},
 note = {Recent studies have shown the application of amorphous carbon as a semiconductor in C/Si heterojunction photovoltaic solar cells. In this letter, we report the rectifying current-voltage characteristics of the phosphorus-doped carbon/undoped-carbon (n-C/p-C) junction. The p- and n-carbon films were deposited by pyrolysis and ion-beam sputtering, respectively, on a p-Si substrate, using camphor as a natural carbon precursor. The preliminary photovoltaic characteristics of the cell reveals a short-circuit current density of 17.1 mA/cm2, open-circuit voltage of 0.339 V, and photoelectrical conversion efficiency of 1.82%, a reproducible result, under air mass zero and 1 sun illumination conditions. The spectral photoresponse characteristics of the cell of the above configuration was explained in terms of transmission/absorption characteristics of the two individual carbon layers., application/pdf},
 pages = {1472--1474},
 title = {Photovoltaic and spectral photoresponse characteristics of n-C/p-C solar cell on a p-silicon substrate},
 volume = {77},
 year = {2000}
}